Two inventions from Hefei ASUNX Semiconductors Co Ltd or ASUNX – in the field of wide band power semiconductors – won gold medals at the 48th Geneva International Exhibition of Inventions, held in Switzerland on April 26-30.

Founded in 2021, ASUNX makes third-generation semiconductor power devices and develops high-efficiency power conversion technology. It's based in the Hefei National High-tech Industry Development Zone, located in Hefei, capital city of East China's Anhui province.

Professor Hu Cun'gang receives the Gold Medal AFJ Award at the exhibition in Geneva, Switzerland. [Photo/WeChat ID: hefeigaoxinfabu]

One of the winners was the super-high power density GaN-based DC-DC converter project. Led by Hu Cun'gang, a professor at Anhui University and chief consultant at ASUNX, it won the Gold Medal AFJ Award – the highest-level award at the event.

Professor Cao Wenping receives an award in Switzerland. [Photo/WeChat ID: hefeigaoxinfabu]

The other triumphant project, an intelligent gate-drive control for SiC power devices for a through-life health monitoring project, was led by Cao Wenping, chairman of ASUNX and another professor at Anhui University.

The Geneva International Exhibition of Inventions is the world's largest annual event devoted exclusively to inventions, founded in 1973. Nearly 1,000 inventions from Asia, the Middle East and Europe took part in the 48th edition.

Professor Cao Wenping from Hefei ASUNX Semiconductors Co Ltd gives details about ASUNX's products to the chairman of the selection committee in Geneva. [Photo/WeChat ID: hefeigaoxinfabu]